Reply to "Comment on 'Lifetime of metastable states in resonant tunneling structures'"

被引：0
|
作者：
Tretiakov, OA [1 ]
Matveev, KA
机构：
[1] Duke Univ, Dept Phys, Durham, NC 27708 USA
[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
来源：
PHYSICAL REVIEW B | 2005年 / 71卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.71.047302
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We find the true low bound of the size of a critical nucleus of the low-current state in double-barrier resonant tunneling structures. By changing the structural parameters of the device, the critical nucleus size can be made as low as the typical distance between electrons in the well. We thus reaffirm that the decay of the metastable upper current state via the nucleation mechanism can be achieved in resonant tunneling structures.
引用
收藏
页数：2
相关论文
共 50 条
  • [1] Lifetime of metastable states in resonant tunneling structures
    Tretiakov, OA
    Gramespacher, T
    Matveev, KA
    PHYSICAL REVIEW B, 2003, 67 (07):
  • [2] Comment on "Lifetime of metastable states in resonant tunneling structures" -: art. no. 047301
    Rodin, P
    Schöll, E
    PHYSICAL REVIEW B, 2005, 71 (04)
  • [3] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - COMMENT
    SOLLNER, TCLG
    PHYSICAL REVIEW LETTERS, 1987, 59 (14) : 1622 - 1622
  • [4] LIFETIME OF RESONANT STATE IN A RESONANT TUNNELING SYSTEM
    HARADA, N
    KURODA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (11): : L871 - L873
  • [5] PHOTOLUMINESCENT DETERMINATION OF CHARGE ACCUMULATION IN RESONANT TUNNELING STRUCTURES - REPLY
    YOUNG, JF
    WOOD, BM
    AERS, GC
    DEVINE, RLS
    LIU, HC
    LANDHEER, D
    BUCHANAN, M
    THORPE, AJS
    MANDEVILLE, P
    PHYSICAL REVIEW LETTERS, 1989, 62 (10) : 1208 - 1208
  • [6] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - REPLY
    GOLDMAN, VJ
    TSUI, DC
    CUNNINGHAM, JE
    PHYSICAL REVIEW LETTERS, 1987, 59 (14) : 1623 - 1623
  • [7] Decay of metastable current states in one-dimensional resonant tunneling devices
    Tretiakov, OA
    Matveev, KA
    PHYSICAL REVIEW B, 2006, 73 (11)
  • [8] RESONANT TUNNELING VIA LOCALIZED STATES IN THIN MOS STRUCTURES
    HARTSTEIN, A
    KOCH, RH
    SURFACE SCIENCE, 1986, 170 (1-2) : 391 - 396
  • [9] Tunneling spectroscopy of bound and resonant states in superconducting proximity structures
    Levi, Y
    Millo, O
    Rizzo, ND
    Prober, DE
    Motowidlo, LR
    APPLIED SURFACE SCIENCE, 1999, 144-45 : 575 - 579
  • [10] LIFETIME OF METASTABLE VACUUM STATES
    KATZ, HJ
    PHYSICAL REVIEW D, 1978, 17 (04): : 1056 - 1062
12345