Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors

The paper presents a novel preparation technique for Si- and Ge-based half-metallic full-Heusler alloy thin films, utilizing silicon-on-insulator (SOI) and germanium-on-insulator (GOT) substrates, respectively. Full-Heusler Co2FeSi (Co2FeGe) alloy thin films were successfully formed by thermally activated silicidation (germanidation) reaction between an ultra-thin SOI (GOI) layer and Co/Fe layers deposited oil it. This technique call easily produce fully ordered L2(1) structure that is necessary for the half-metallicity of full-Heusler alloys. The proposed technique is compatible with metal source/drain formation process in advanced CMOS technology and would be applicable to the fabrication of the half-metallic source/drain of MOSFET type of spin transistors.