Ultrasonic spray-pyrolyzed CuCrO2 thin films

被引:19
|
作者
Sanchez-Alarcon, R. I. [1 ]
Oropeza-Rosario, G. [2 ]
Gutierrez-Villalobos, A. [1 ]
Muro-Lopez, M. A. [1 ]
Martinez-Martinez, R. [2 ]
Zaleta-Alejandre, E. [3 ]
Falcony, C. [4 ]
Alarcon-Flores, G. [1 ]
Fragoso, R. [4 ]
Hernandez-Silva, O. [1 ]
Perez-Cappe, E. [5 ]
Mosqueda Laffita, Yodalgis [5 ]
Aguilar-Frutis, M. [1 ]
机构
[1] Inst Politecn Nacl, Ctr Invest Ciencia Aplicada & Tecnol Avanzada, Legaria 694, Mexico City, DF, Mexico
[2] Univ Tecnol Mixteca, Carretera Acatlima Km 2-5, Huajuapan De Leon, Oaxaca, Mexico
[3] Univ Autonoma Estado Hidalgo, Escuela Super Apan, Carretera Apan Calpulalpan,Km 8, Apan Hidalgo 43920, Mexico
[4] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Apdo Postal 14-740, Mexico City 07000, DF, Mexico
[5] Univ La Habana, Inst Ciencia & Tecnol Mat IMRE, Havana 10400, Cuba
关键词
spray pyrolysis; CuCrO2; films; electrical properties; optical properties; impedance spectroscopy; PULSED-LASER DEPOSITION; DELAFOSSITE STRUCTURE; ELECTRICAL-PROPERTIES; CUALO2;
D O I
10.1088/0022-3727/49/17/175102
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper the optical, structural and electrical properties of CuCrO2 thin films deposited by ultrasonic spray pyrolysis at temperatures from 400 to 600 degrees C in steps of 50 degrees C are presented. Copper and chromium acetylacetonates were chosen as sources of Cu and Cr, respectively, and N, N-dimethylformamide was used as the solvent. X-ray results confirmed that the films as deposited showed the CuCrO2 phase without any post-deposition thermal annealing. The surface morphology was observed to be mirror like, and as the films were deposited at different temperatures, they gradually revealed the presence of small crystallites. The best film's optical percentage transmission (in the visible region), about 58%, was obtained in films deposited at 450 degrees C, and the highest band gap energy (3.17 eV) was measured in films deposited at 400 degrees C. The electrical properties of the films were obtained by the Hall effect. A hole concentration in the range 10(19)-10(21) cm(-3), conductivity as high as 35 S cm(-1), and mobility lower than 1 cm(2) V-1 s(-1) were obtained in the films. p-type conductivity was confirmed using the hot point probe arrangement, and the Seebeck coefficient was estimated. The hole conductivity is thought to be due to excess oxygen in the films. Finally, the minimum energy required to transfer carriers from acceptor level to the valence band in the films was estimated by impedance spectroscopy.
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页数:7
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