Resonant tunneling and interface band mixing of X-electrons in GaAs/AlAs heterostructures

被引：0
|
作者：
Klipstein, PC [1 ]
机构：
[1] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2001年 / 223卷 / 01期
关键词：
D O I：
10.1002/1521-3951(200101)223:1<87::AID-PSSB87>3.0.CO;2-O
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Recent research at Oxford is reviewed on resonant tunneling in type II GaAs/AlAs "double barrier" structures. In this work high pressure and high magnetic field, both parallel and perpendicular to the layers, play a key role. Our results include the first determination of the pressure dependence of the transverse effective mass in AlAs, a complete re-evaluation of the shape of the camel's back dispersion, and the first observation of X-x-X-y interface band mixing.
引用
收藏
页码：87 / 96
页数：10
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