Interlayer valley excitons in heterobilayers of transition metal dichalcogenides

被引:408
|
作者
Rivera, Pasqual [1 ]
Yu, Hongyi [2 ,3 ]
Seyler, Kyle L. [1 ]
Wilson, Nathan P. [1 ]
Yao, Wang [2 ,3 ]
Xu, Xiaodong [1 ,4 ]
机构
[1] Univ Washington, Dept Phys, Seattle, WA 98195 USA
[2] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[3] Univ Hong Kong, Ctr Theoret & Computat Phys, Hong Kong, Hong Kong, Peoples R China
[4] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA
关键词
DER-WAALS HETEROSTRUCTURES; SPATIALLY INDIRECT EXCITONS; CHARGE-TRANSFER EXCITONS; ROOM-TEMPERATURE; BAND ALIGNMENT; MOIRE PATTERN; MOS2/WS2; SPIN; POLARIZATION; GENERATION;
D O I
10.1038/s41565-018-0193-0
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Stacking different two-dimensional crystals into van der Waals heterostructures provides an exciting approach to designing quantum materials that can harness and extend the already fascinating properties of the constituents. Heterobilayers of transition metal dichalcogenides are particularly attractive for low-dimensional semiconductor optics because they host interlayer excitons with electrons and holes localized in different layers which inherit valley-contrasting physics from the monolayers and thereby possess various novel and appealing properties compared to other solid-state nanostructures. This Review presents the contemporary experimental and theoretical understanding of these interlayer excitons. We discuss their unique optical properties arising from the underlying valley physics, the strong many-body interactions and electrical control resulting from the electric dipole moment, and the unique effects of a moire superlattice on the interlayer exciton potential landscape and optical properties.
引用
收藏
页码:1004 / 1015
页数:12
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