Modeling and plasma characteristics of high-power direct current discharge

被引:19
|
作者
Chen, Lei [1 ]
Cui, Suihan [1 ]
Tang, Wei [1 ]
Zhou, Lin [1 ]
Li, Tijun [1 ]
Liu, Liangliang [2 ,3 ]
An, Xiaokai [1 ]
Wu, Zhongcan [1 ]
Ma, Zhengyong [1 ]
Lin, Hai [1 ]
Tian, Xiubo [1 ]
Fu, Ricky Ky [2 ,3 ]
Chu, Paul K. [2 ,3 ]
Wu, Zhongzhen [1 ]
机构
[1] Peking Univ, Sch Adv Mat, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
[2] City Univ Hong Kong, Dept Phys, Dept Mat Sci & Engn, Kowloon, Hong Kong, Peoples R China
[3] City Univ Hong Kong, Dept Biomed Engn, Kowloon, Hong Kong, Peoples R China
来源
PLASMA SOURCES SCIENCE & TECHNOLOGY | 2020年 / 29卷 / 02期
关键词
thermal accumulation; sputtering-HPMS; ionization rate; deposition rate; ELECTRON-IMPACT IONIZATION; CROSS-SECTIONS; DEPOSITION; HIPIMS; ATOMS; FILMS; IONS;
D O I
10.1088/1361-6595/ab681c
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
To obtain both high ionization and high deposition rate, a modified global model for a continuous high-power DC magnetron sputtering (C-HPMS) is established by considering the continuous generation of the hot electrons and the high temperature caused by continuous high-power discharge. The results show that the plasma density is on the order of 10(19) m(-3) for power densities of only 183 W cm(-2) (Al) and 117 W cm(-2) (Cu). The ionization rate exceeds 90% of high-power impulse magnetron sputtering (HiPIMS) (peak power density of 564 W cm(-2)) for a DC power density of 180 W cm(-2), and the total diffusion fluxes of the two targets are 26 (Al) and 30 (Cu) times that of conventional HiPIMS, leading to very high deposition rates. The work provides a theoretical basis for the realization of C-HPMS and gives an enlightenment to the development of deposition equipment for continuous high-power discharges.
引用
收藏
页数:12
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