Time-resolved photoluminescence spectra of InGaN epilayer

被引：0
|
作者：
Li, Wei [1 ]
Wang, Wei Ying [2 ]
机构：
[1] Aviation Ind Corp China, Changcheng Inst Metrol & Measurement, Sci & Technol Metrol & Calibrat Lab, Beijing 100095, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
YOUNG SCIENTISTS FORUM 2017 | 2018年 / 10710卷
关键词：
InGaN; Time-resolved Photoluminescence; Carrier Dynamics; LOCALIZED EXCITONS; LIFETIME;
D O I：
10.1117/12.2314701
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
InGaN epitaxial layer has been studied by means of temperature dependent time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL). The PL peak energy was fitted by a thermal activation and thermal transfer model, and a fast carriers transfer time was obtained. A small redshift as decay time increases was observed at low temperature in the TRPL spectra, and the redshift was enhancing with increasing temperature. These behaviors are caused by a change in the carrier dynamics with increasing temperature due to the carriers transferring in the localized states in InGaN eplayer.
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页数：8
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