Performance of a diode-pumped 5W Nd3+:GdVO4 microchip laser at 1.06μm

被引：69
|
作者：
Wyss, CP
Lüthy, W
Weber, HP
Vlasov, VI
Zavartsev, YD
Studenikin, PA
Zagumennyi, AI
Shcherbakov, IA
机构：
[1] Univ Bern, Inst Appl Phys, CH-3012 Bern, Switzerland
[2] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia
来源：
APPLIED PHYSICS B-LASERS AND OPTICS | 1999年 / 68卷 / 04期
关键词：
D O I：
10.1007/s003400050682
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
GdVO4 as a host for neodymium has several advantages for diode pumping in comparison with other crystals. The absorption cross section of neodymium in GdVO4 is considerably stronger and broader than in YAG. This allows for the construction of very compact monolithical microchip lasers. In our paper, we report for the first time on a diode-pumped monolithical Nd3+ (1.3 at. %):GdVO4 microchip laser at 1.06 mu m. A maximum output power of 5 W is achieved. The temporal and the spectral emission properties are described. The beam propagation properties are studied in detail.
引用
收藏
页码：659 / 661
页数：3
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