Monolithic fabrication of GaN/Si structure for optical MEMS

被引：0
|
作者：
Ito, R. [1 ]
Hu, F. R. [1 ]
Wakui, M. [1 ]
Hane, K. [1 ]
机构：
[1] Tohoku Univ, Dept Nanomech, Sendai, Miyagi 9808579, Japan
来源：
IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new light source with a light beam steering mechanism is proposed for Optical MEMS. The propose device is composed of GaN light source and a movable stage. The direction of the light beam emitted from the GaN light source can be changed by the stage with the comb drive actuators. We deposited the GaN films on Si substrate by molecular beam epitaxy (MBE) and fabricated a movable stage by Si micromachining. The displacement of the Si stage was measured to be 50 um at the voltage of 100V and photoluminescence (PL) from the GaN light source was observed while moving the stage.
引用
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页码：1375 / 1377
页数：3
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