1550 nm GaInNAsSb distributed feedback laser diodes on GaAs

被引：5

作者：

Gupta, J. A. ^{[1
]}

Barrios, P. J. ^{[1
]}

Aers, G. C. ^{[1
]}

Lapointe, J. ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 09期

关键词：

D O I：

10.1049/el:20080479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Singlemode laser diodes on GaAs substrates were developed using GaInNAsSb double quantum well active regions grown by molecular beam epitaxy. The distributed feedback devices were fabricated using a regrowth-free process in which lateral Cr gratings were deposited adjacent to a dry-etched narrow ridge waveguide. In continuous-wave (CW) operation the devices exhibit a lasing wavelength of 1550 nm at 10 degrees C with a very high sidemode suppression ratio of >50 dB throughout most of the operational range, and output power up to 15 mW.

引用

页码：578 / 579

页数：2

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