Stereodynamics in dissociative adsorption of NO on Si(111)

被引:16
|
作者
Hashinokuchi, M. [1 ]
Okada, M. [1 ,2 ]
Ito, H. [1 ]
Kasai, T. [1 ]
Moritani, K. [3 ]
Teraoka, Y. [3 ]
机构
[1] Osaka Univ, Grad Sch Sci, Dept Chem, Osaka 5600043, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Saitama 3320012, Japan
[3] Japan Atom Energy Agcy, Synchrotron Radiat Res Ctr, Sayo, Hyogo 6795148, Japan
基金
日本学术振兴会;
关键词
D O I
10.1103/PhysRevLett.100.256104
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report results of our study on the surface-temperature dependence of the steric effect in the dissociative adsorption of NO on Si(111)-(7 x 7). Data presented here show that, at an incident energy of 58 meV, the reactive sticking probability for the N-end collision is larger than that for the O-end collision. Furthermore, this steric preference is quite sensitive to the surface temperature and the surface coverage. This study shows that the transient surface trapping into a shallow precursor well plays a key role in the stereodynamics of the dissociative adsorption at the low energy region.
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页数:4
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