The transverse thermoelectric effect in a-axis inclined oriented SnSe thin films

被引:13
|
作者
Hou, Shuaihang [1 ]
Yuan, Dachao [1 ,2 ]
Yan, Guoying [1 ]
Wang, Jianglong [1 ]
Liang, Baolai [1 ]
Fu, Guangsheng [1 ]
Wang, Shufang [1 ]
机构
[1] Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China
[2] Agr Univ Hebei, Coll Mech & Elect Engn, Baoding 071001, Peoples R China
基金
中国国家自然科学基金;
关键词
PERFORMANCE; LAYER;
D O I
10.1039/c8tc04633f
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tin selenide (SnSe) has recently attracted great attention as a new promising thermoelectric material. In this paper, a-axis inclined oriented SnSe thin films have been fabricated by pulsed laser deposition for the development of the transverse thermoelectric effect. Large open-circuit voltage signals along the film plane are all clearly observed when the film surface is illuminated by different lasers with the wavelength ranging from 532 to 2200 nm with no external bias or a built-in electric field, and the amplitude of the output voltage can be enhanced by tuning the inclination angle of the films or the applied temperature difference across the film thickness. Moreover, transverse open-circuit voltage signals are also detected when the film surface is irradiated by a thermal heater. This work demonstrates the novel potential application of SnSe for self-powered broad-band light detectors or thermal sensors.
引用
收藏
页码:12858 / 12863
页数:6
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