Modulation effects of S vacancy and Mo edge on the adsorption and dissociation behaviors of toxic gas (H2S, SO2) molecules on the MoS2 monolayer

被引:6
|
作者
Huang, Min [1 ]
Dinesh, Acharya [2 ,3 ]
Wu, Songtao [4 ]
机构
[1] Hubei Univ, Fac Phys & Elect Sci, Key Lab Ferro & Piezoelect Mat & Devices Hubei Pr, Wuhan 430062, Peoples R China
[2] Chinese Acad Sci, Innovat Acad Precis MeasurementSci & Technol, Wuhan Inst Phys & Math,State Key Lab Magnet Reson, Natl Ctr Magnet Resonance Wuhan,Key Lab Magnet Re, Wuhan 430071, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[4] Wuhan Hanneng Power Dev Co Ltd, Wuhan 430056, Peoples R China
关键词
SINGLE-LAYER MOS2; TOTAL-ENERGY CALCULATIONS; SITES; STABILITY; ADSORBENT; POINTS; SULFUR;
D O I
10.1039/d1cp01242h
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This study focuses on the modulation effects of S vacancy and Mo edges on the adsorption and dissociation behaviors of toxic gases (H2S and SO2) on MoS2 by first-principles calculations. Both molecules are found to chemisorb at the S vacancy (SV) and pristine Mo edge and physisorb at the Mo edge with a 50% sulfur coverage (Mo-50 edge). Among them, SO2 has larger adsorption energy than H2S on both S vacancy and pristine Mo edge, which is related to a more electronegative O than S atom and electronically rich for the pristine Mo edge. The defective states of MoS2 induced by SV can be removed by forming Mo-S, Mo-O and Mo-H bonds upon the adsorption of SO2 and the dissociation of H2S, which is applicable in designing MoS2 based nano-electronics devices in the future. The dissociations of H2S and SO2 on pristine Mo edges are found to be more favorable than those on S vacancies due to the catalytically active Mo4+ states at edge sites. H2S is found to dissociate on the Mo-50 edge more easily than SO2. The adsorptions and dissociations of toxic gas on MoS2 with SV or Mo edges suggest MoS2 is a potential candidate in detecting and removal of toxic gases.
引用
收藏
页码:15364 / 15373
页数:10
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