Investigation of the effect of Sn doping on Al/Sn: ZnS/p-Si diode parameters with C-V and G/ω-V characteristics

被引：0
|
作者：
Cam, Sirin Uzun [1 ]
Yazici, A. Necmeddin [1 ]
Alsac, Aysun Arslan [2 ]
Serin, Tulay [2 ]
机构：
[1] Gaziantep Univ, Fac Engn, Dept Engn Phys, TR-27310 Gaziantep, Turkey
[2] Ankara Univ, Fac Engn, Dept Engn Phys, TR-06100 Ankara, Turkey
来源：
PHYSICA B-CONDENSED MATTER | 2022年 / 627卷
关键词：
ZnS; Sn doped; MIS Structure; Diode; Sol-gel; DEPENDENT INTERFACE STATES; SERIES RESISTANCE; THIN-FILMS; I-V; FABRICATION; CAPACITANCE; FREQUENCY; PROFILE; MN;
D O I：
10.1016/j.physb.2021.413593
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this study, Sn (tin) doped ZnS (zinc sulphide) films have been deposited on the p-type Si (silicon) crystal substrates by the sol-gel dipping technique. The effect of Sn doping in ZnS on diode parameters has been studied via capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements in the frequency range of 10 kHz - 1.5 MHz at room temperature. Fermi energy level (E-F), carrier concentration (N-A), the density of interface states (N-ss), barrier heights (Phi(B)), and built-in potential (V-bi) of the diodes have been obtained by C-V characteristics. Series resistance (R-s) values of diodes have been determined for different frequencies via C-V and G/omega-V measurements.
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页数：6
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