Electrical properties of doped SnS thin films prepared by vacuum evaporation

被引：0
|
作者：
Guo, Yuying [1 ]
Shi, Weimin [1 ]
Wei, Guangpu [1 ]
机构：
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China
来源：
PROCEEDINGS OF ISES SOLAR WORLD CONGRESS 2007: SOLAR ENERGY AND HUMAN SETTLEMENT, VOLS I-V | 2007年
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D O I：
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中图分类号：
TU [建筑科学];
学科分类号：
0813 ;
摘要：
Tin sulfide (SnS) has received much attention because of its high absorption coefficient, suitable band-gap and little toxicity. In this paper, doped-SnS thin films were fabricated by vacuum evaporation. Sb, Sb2O3, Se, Te, In, In2O3, Se and In2O3 were used as dopant sources. The thickness and conductance of various doped-SnS thin films were measured, and then the resistivities and the ratio of photo-conductivity to dark-conductivity (G(photo)/G(dark)) Of these films were calculated. From the experimental results, Sb is the best dopant source. The resistivity of Sb doped-SnS thin film is reduced by four orders of magnitude and the value of G(photo)/G(dark) is double. In addition, the influence of Sb doping content on the electrical properties of doped-SnS thin films was also investigated, and the optimum doping content of Sb is 1.3%similar to 1.5% in weight.
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页码：1337 / 1340
页数：4
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