Distortion of Fermi surface induced by parallel magnetic field in a two-dimensional electron gas

被引:15
|
作者
Ohtsuka, K
Takaoka, S
Oto, K
Murase, K
Gamo, K
机构
[1] Osaka Univ, Dept Phys, Grad Sch Sci, Toyonaka, Osaka 560, Japan
[2] Osaka Univ, Div Adv Elect & Opt Sci, Grad Sch Engn Sci, Toyonaka, Osaka 560, Japan
关键词
Fermi surface; magnetic electron focusing;
D O I
10.1016/S0921-4526(98)00313-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have investigated the anisotropy of Fermi surface of two-dimensional electron gas in GaAs/AlGaAs heterostructures induced by a strong parallel magnetic field. By means of a magnetic electron focusing effect, the anisotropy of the cyclotron diameter, that is, the anisotropy of the Fermi surface, is directly determined. The anisotropy of Fermi surface increases by 5-10% with increasing parallel magnetic field up to 6 T. It is found that the anisotropy is enlarged with increasing carrier density by illumination, while the anisotropy increases with decreasing carrier density by the gate voltage. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:780 / 783
页数:4
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