Chemisorption on semiconductors: The role of quantum corrections on the space charge regions in multiple dimensions

被引：9

作者：

Ciucci, Francesco ^{[1
,2
]}

de Falco, Carlo ^{[3
]}

Guzman, Marcelo I. ^{[4
]}

Lee, Sara ^{[5
]}

Honda, Tomonori ^{[6
]}

机构：

[1] HKUST, Dept Mech Engn, Kowloon, Hong Kong, Peoples R China

[2] HKUST, Dept Chem & Biomol Engn, Kowloon, Hong Kong, Peoples R China

[3] Politecn Milan, Dept Math, MOX, I-20133 Milan, Italy

[4] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA

[5] Univ Heidelberg, Dept Math, D-69121 Heidelberg, Germany

[6] MIT, Dept Mech Engn, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 18期

关键词：

OXIDE GAS SENSORS; GRAIN-SIZE; SENSITIVITY; DIFFUSION; NANOSCALE; TRANSPORT;

D O I：

10.1063/1.4709483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The chemisorption of O-2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrodinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709483]

引用

页数：4

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