First-principles design of a Dirac semimetal: An NP monolayer

被引:13
|
作者
Nie, Yaozhuang [1 ]
Zhang, Jianmin [1 ]
Chen, Wei [1 ]
Xia, Qinglin [1 ]
Wang, Xiguang [1 ]
Guo, Guang-hua [1 ]
机构
[1] Cent South Univ, Sch Phys & Elect, Changsha 410083, Peoples R China
基金
中国国家自然科学基金;
关键词
ELECTRONIC-PROPERTIES; SEMICONDUCTOR; LINES;
D O I
10.1103/PhysRevB.101.235443
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a two-dimensional (2D) Dirac semimetal in an orthorhombic Pmma structure, an NP monolayer, based on first-principles calculations. The NP monolayer is found to be stable according to phonon dispersion and molecular dynamical simulations. It exhibits a pair of anisotropic Dirac cones exactly at the Fermi level, located along high symmetry lines in the Brillouin zone, and shows highly anisotropic in-plane stiffness. First-principles calculations show that Dirac cones are locally stable under strains along the x or y direction and electric fields perpendicular to the monolayer. The Dirac nodes are protected from gap opening by the mirror-reflection symmetry in the x direction. We construct an effective two-band tight-binding model to characterize the Dirac states. Our result provides a promising 2D material for special electronics applications.
引用
收藏
页数:7
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