CDMA2000 PCS/Cell SiGe HBT load insensitive power amplifiers

被引：0
|
作者：
Berretta, G [1 ]
Cristaudo, D [1 ]
Seaccianoce, S [1 ]
机构：
[1] STMicroelect, I-95121 Catania, Italy
来源：
2005 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2005年
关键词：
ACPR; CDMA2000; HBT; linear; power amplifler; RF; SiGe; VSWR;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel power amplifier design technique has been proposed that uses load pull measurements in order to optimize linearity and efficiency. Two SiGe HBT MMIC power amplifiers suitable for Cell and PCS applications have been realized in a 0.25 mu m BiCMOS technology. Thanks to the design technique implemented, CDMA2000-1X specifications can be met under output load mismatch up to 4:1 VSWR, thus allowing the removal of the external isolator in the transmitter chain.
引用
收藏
页码：601 / 604
页数：4
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