An approach to determine small-signal model parameters for InP HBT up to 110 GHz

被引：7

作者：

Zhang Ao ^{[1
]}

Zhang Yi-Xin ^{[1
]}

Wang Bo-Ran ^{[1
]}

Gao Jian-Jun ^{[1
]}

机构：

[1] East China Normal Univ, Sch Informat Sci Technol, Shanghai 200241, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2018年 / 37卷 / 06期

基金：

中国国家自然科学基金;

关键词：

equivalent circuits; heterojunction bipolar transistor(HBT); device modeling; DIRECT EXTRACTION;

D O I：

10.11972/j.issn.1001-9014.2018.06.009

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An approach for determination of small-signal equivalent circuit model elements for InP HBT is presented in this paper. The skin effect of the feedlines is taken into account in the proposed model. This method combines the analytical approach and empirical optimization procedure. The intrinsic elements determined by a conventional analytical parameter transformation technique are described as function of extrinsic resistances. An excellent fit between measured and simulated S-parameters in the frequency range of 2 similar to 110 GHz is obtained for InP HBT.

引用

页码：688 / 692

页数：5

共 8 条

[1] Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs
Gao, J
Li, X
Wang, H
Boeck, G
[J]. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 2005, 152 (06): : 661 - 666
[2] Gao J., 2015, Heterojunction Bipolar Transistors for Circuit Design: Microwave Modeling and Parameter Extraction
[3] Direct Extraction of InP/GaAsSb/InP DHBT Equivalent-Circuit Elements From S-Parameters Measured at Cut-Off and Normal Bias Conditions
Johansen, Tom K.
Leblanc, Remy
Poulain, Julien
Delmouly, Vincent
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (01) : 115 - 124
[4] HBT modeling
McMacken, John
Nedejkovic, Sonja
Gering, Joe
Halchin, Dave
[J]. IEEE MICROWAVE MAGAZINE, 2008, 9 (02) : 48 - +
[5] Stepping toward standard methods of small-signal parameter extraction for HBT's
Sotoodeh, M
Sozzi, L
Vinay, A
Khalid, AH
Hu, ZR
Rezazadeh, AA
Menozzi, R
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (06) : 1139 - 1151
[6] Demonstration of aluminum-free metamorphic InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on GaAs substrates
Wang, H
Ng, GI
Zheng, HQ
Xiong, YZ
Chua, LH
Yuan, KH
Radhakrishnan, K
Yoon, SF
[J]. IEEE ELECTRON DEVICE LETTERS, 2000, 21 (09) : 427 - 429
[7] DIRECT EXTRACTION OF EQUIVALENT-CIRCUIT PARAMETERS FOR HETEROJUNCTION BIPOLAR-TRANSISTORS
WEI, CJ
HWANG, JCM
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1995, 43 (09) : 2035 - 2040
[8] Thermal resistance of metamorphic InP-based HBTs on GaAs substrates using a linearly graded InxGa1-xP metamorphic buffer
Yang, H
Wang, H
Radhakrishnan, K
Tan, CL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (08) : 1221 - 1227

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