A single-atom quantum memory in silicon

被引:29
|
作者
Freer, Solomon [1 ]
Simmons, Stephanie [1 ,4 ]
Laucht, Arne [1 ]
Muhonen, Juha T. [1 ,5 ]
Dehollain, Juan P. [1 ,6 ,7 ]
Kalra, Rachpon [1 ,8 ]
Mohiyaddin, Fahd A. [1 ,9 ]
Hudson, Fay E. [1 ]
Itoh, Kohei M. [2 ]
McCallum, Jeffrey C. [3 ]
Jamieson, David N. [3 ]
Dzurak, Andrew S. [1 ]
Morello, Andrea [1 ]
机构
[1] UNSW Sydney, Sch Elect Engn & Telecommun, Ctr Quantum Computat & Commun Technol, Sydney, NSW 2052, Australia
[2] Keio Univ, Sch Fundamental Sci & Technol, 3-14-1 Hiyoshi, Yokohama, Kanagawa 2238522, Japan
[3] Univ Melbourne, Sch Phys, Ctr Quantum Computat & Commun Technol, Melbourne, Vic 3010, Australia
[4] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
[5] FOM Inst AMOLF, Ctr Nanophoton, Sci Pk 104, NL-1098 XG Amsterdam, Netherlands
[6] QuTech, NL-2628 CJ Delft, Netherlands
[7] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
[8] Univ Queensland, Sch Math & Phys, Brisbane, Qld 4072, Australia
[9] Oak Ridge Natl Lab, Quantum Comp Inst, Oak Ridge, TN USA
来源
QUANTUM SCIENCE AND TECHNOLOGY | 2017年 / 2卷 / 01期
基金
澳大利亚研究理事会;
关键词
quantum memory; spin qubits; silicon quantum computing; single-atom devices; single-spin magnetic resonance; phosphorus in silicon; quantum coherence; ELECTRON-SPIN; INFORMATION; STORAGE; READOUT; QUBIT;
D O I
10.1088/2058-9565/aa63a4
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a 'quantum memory' while idle. The P-31 donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the P-31 nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically enriched Si-28. The fidelity of the memory process is characterised via both state and process tomography. Wereport an overall process fidelity F-p approximate to 81%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses.
引用
收藏
页数:9
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