Impact of flash lamp annealing on 20-nm-gate-length metal oxide silicon field effect transistors

被引：2

作者：

Nishinohara, KT ^{[1
]}

Ito, T ^{[1
]}

Itani, T ^{[1
]}

Suguro, K ^{[1
]}

机构：

[1] Toshiba Co Ltd, Proc & Mfg Engn Ctr, Semicond Co, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 10A期

关键词：

flash lamp annealing; spike annealing; MOSFET; shallow junction; resistivity; mobility;

D O I：

10.1143/JJAP.42.L1126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The advantages of using the new flash lamp annealing (FLA) technology and a shallow junction with the consequent low sheet resistivity for metal oxide silicon field effect transistors (MOSFETs) with gate length (L) of 20 nm were clarified by computer simulations based on MOSFETs fabricated with FLA for the first time. In contrast to spike annealing, the shallow junction realized by applying FLA to pMOSFET fabrication enabled the suppression of \I-off\ with a low channel surface dopant concentration, thus providing a higher mobility value and a higher drive current. FLA is promising for improving the performance of sub-30-nm-gate-length MOSFETs.

引用

页码：L1126 / L1129

页数：4

共 50 条

[1] Impact of Flash Lamp Annealing on 20-nm-Gate-Length Metal Oxide Silicon Field Effect Transistors
Nishinohara, Kazumi T.
Ito, Takayuki
Itani, Takaharu
Suguro, Kyoichi
Japanese Journal of Applied Physics, Part 2: Letters, 2003, 42 (10 A):
[2] 20-nm-gate-length erbium-/platinum-silicided n-/p-type Schottky barrier metal-oxide-semiconductor field-effect transistors
Jang, Moongyu
Choi, Cheljong
Lee, Seongjae
APPLIED PHYSICS LETTERS, 2008, 93 (19)
[3] High-Performance Silicon Nanowire Reconfigurable Field Effect Transistors Using Flash Lamp Annealing
Ghosh, Sayantan
Khan, Muhammad Bilal
Prucnal, Slawomir
Huebner, Rene
Chava, Phanish
Mauersberger, Tom
Mikolajick, Thomas
Erbe, Artur
Georgiev, Yordan M.
ACS APPLIED ELECTRONIC MATERIALS, 2025, 7 (06) : 2284 - 2297
[4] Improvement of performance deviation and productivity of MOSFETs with gate length below 30 nm by flash lamp annealing
Nishinohara, KT
Ito, T
Suguro, K
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2004, 17 (03) : 286 - 291
[5] Improvement of performance deviation and productivity of MOSFETs with gate length below 30 nm by flash lamp annealing
Nishinohara, KT
Ito, T
Suguro, K
2003 IEEE INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING, CONFERENCE PROCEEDINGS, 2003, : 175 - 178
[6] Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors
D. Rechem
S. Latreche
C. Gontrand
Pramana, 2009, 72 : 587 - 599
[7] Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors
Rechem, D.
Latreche, S.
Gontrand, C.
PRAMANA-JOURNAL OF PHYSICS, 2009, 72 (03): : 587 - 599
[8] Validity of mobility universality for scaled metal-oxide-semiconductor field-effect transistors down to 100 nm gate length
Matsumoto, S
Hisamitsu, K
Tanaka, M
Ueno, H
Miura-Mattausch, M
Mattausch, HJ
Kumashiro, S
Yamaguchi, T
Odanaka, S
Nakayama, N
JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) : 5228 - 5232
[9] Novel silicon on insulator metal oxide semiconductor field effect transistors with buried back gate
Oh, H
Choi, H
Sakaguchi, T
Shim, J
Kurino, H
Koyanagi, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B): : 2140 - 2144
[10] Effect of Flash Lamp Annealing and Laser Spike Annealing on Random Dopant Fluctuation of 15-nm Metal-Oxide-Semiconductor Devices
Cheng, Hui-Wen
Hwang, Chih-Hong
Chao, Ko-An
Li, Yiming
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (03) : 2462 - 2466

← 1 2 3 4 5 →