Transmission electron microscopical studies of the layered structure of the ternary semiconductor CuIn5Se8

被引：0
|
作者：
Tham, AT
Su, DS
Neumann, W
Schubert-Bischoff, P
Beilharz, C
Benz, KW
机构：
[1] Humboldt Univ, Inst Phys, Chair Crystallog, D-10115 Berlin, Germany
[2] Max Planck Soc, Fritz Haber Inst, D-14195 Berlin, Germany
[3] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany
[4] Univ Freiburg, Inst Crystallog, D-79108 Freiburg, Germany
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2001年 / 36卷 / 03期
关键词：
TEM; CuInSe; layer;
D O I：
10.1002/1521-4079(200103)36:3<303::AID-CRAT303>3.3.CO;2-O
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The structure of the off-stoichiometric In-rich ternary phase CuIn5Se8 was studied by means of electron diffraction and high-resolution electron microscopy. The compound shows a layered structure with a 7-layer stacking sequence of closed-packed planes, which contains both cubit: and hexagonal stacking of Se atoms. The studied CuIn5Se8 bulk crystal is known as the beta -phase of this compound.
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收藏
页码：303 / 308
页数：6
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