High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes

被引：61

作者：

Lin, You-Da ^{[1
]}

Yamamoto, Shuichiro ^{[2
,3
]}

Huang, Chia-Yen ^{[2
]}

Hsiung, Chia-Lin ^{[1
]}

Wu, Feng ^{[2
]}

Fujito, Kenji ^{[4
]}

Ohta, Hiroaki ^{[2
]}

Speck, James S. ^{[2
]}

DenBaars, Steven P. ^{[1
,2
]}

Nakamura, Shuji ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Sharp Co Ltd, Adv Technol Res Labs, Nara 6328567, Japan

[4] Mitsubishi Chem Corp, Optoelect Lab, Ushi Ku, Ushiku 3001295, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1143/APEX.3.082001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of InGaN/AlGaN multiple quantum wells (MQWs) structures is highly effective for realizing high quality semipolar (20 (2) over bar1). active regions for green light emitting diodes (LEDs) and laser diodes (LDs) The use of AlGaN barriers significantly improved internal quantum efficiencies and the uniformity of the emission compared to InGaN or GaN barriers 516 nm lasing wavelength was demonstrated on semipolar (20 (2) over bar1) GaN substrates by introducing three periods InGaN/AlGaN MQWs and the AlGaN-cladding-free optical waveguide consisting of GaN cladding and InGaN guiding layers (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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