High-performance waveguide-coupled lateral Ge/Si avalanche photodetector

被引：4

作者：

Pang, Yaqing ^{[1
,2
]}

Liu, Zhi ^{[1
,2
]}

Zhu, Yupeng ^{[1
,2
]}

Liu, Xiangquan ^{[1
,2
]}

Zhang, Diandian ^{[1
,2
]}

Niu, Chaoqun ^{[1
,2
]}

Li, Mingming ^{[1
,2
]}

Zheng, Jun ^{[1
,2
]}

Zuo, Yuhua ^{[1
,2
]}

Cheng, Buwen ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

来源：

OPTICS LETTERS | 2022年 / 47卷 / 17期

基金：

中国国家自然科学基金;

关键词：

GAIN-BANDWIDTH PRODUCT; PHOTODIODES; RECEIVER;

D O I：

10.1364/OL.466206

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A high-performance waveguide-coupled lateral avalanche photodetector (APD) is experimentally demonstrated without silicon epitaxy and charge layer ion implantation. At the wavelength of 1550 nm, it shows a high responsivity of 48 A/W and a gain-bandwidth product (GBP) of 360 GHz. Wide-open eye diagrams at 25 Gbps can be observed at various avalanche gains. These outstanding performances indicate the proposed APD has great potential in high-speed optical transceivers for optical links. (c) 2022 Optica Publishing Group

引用

页码：4463 / 4466

页数：4

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