Resistance-temperature characteristics of polycrystalline diamond silicon wafer structure

A layered structure consisting of diamond thin film was fabricated on a silicon wafer and its temperature-resistance characteristics were studied. For deposition of the diamond thin film, a microwave plasma chemical vapor deposition technique was employed. The X-ray diffraction patterns showed that the film was polycrystalline. The current-voltage characteristics of the layered structure, consisting of undoped diamond thin film fabricated on a silicon wafer, showed strong temperature dependence. The thermistor constant of this structure was about 10,000. The current-voltage characteristics of the layered structure, which consists of boron-doped diamond thin film fabricated on an n-type silicon wafer, showed rectifiability and strong temperature dependence. The thermistor constant of the boron-doped diamond/silicon structure was about 5,000.