Excitonic band edges and optical anisotropy of InAs/InP quantum dot structures

被引：9
|
作者：
Mazur, Yu. I. [1 ]
Noda, S. [1 ]
Tarasov, G. G. [1 ]
Dorogan, V. G. [1 ]
Salamo, G. J. [1 ]
Bierwagen, O. [2 ]
Masselink, W. T. [2 ]
Decuir, E. A., Jr.
Manasreh, M. O. [3 ]
机构：
[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
[2] Humboldt Univ, Dept Phys, D-12489 Berlin, Germany
[3] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 05期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2872781
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical transitions in InAs/InP quantum dot structures are studied and interpreted in terms of heavy- (hh) and light-hole (lh) excitons originating in InAs valence band. Appearance of a step-like absorption and two activation energies in photoluminescence spectra of quantum dots under temperature elevation is described as a transition from the excitonic states to the two-dimensional-like states realized in the InAs/InP quantum dots. A mixture of hh and lh states determines the anisotropy of the transmission spectra and may result in rotation of the polarization plane for light transmitted through the InAs/InP quantum dot system. (C) 2008 American Institute of Physics.
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页数：7
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