Formation of AlN in laser ablated plasma of Al in nitrogen ambient

被引:3
|
作者
Thareja, RK [1 ]
Sharma, AK [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
关键词
D O I
10.1002/pssc.200461282
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report on spectroscopic investigations of interaction of an expanding laser ablated plume of aluminum and graphite with nitrogen gas and the formation of AIN and CN. AIN and CN bands are formed by reactive process of ablated aluminum and graphite in ambient nitrogen pressures of 70 and 0.1 Toff and laser fluence of 500 and 12 Jcm(-2) respectively. Images of the expanding plasma plume were captured using ICCD to understand the role of vapor and shock temperature in the formation of AIN. Instability observed in later ablated plume at later times attributed to Rayleigh-Taylor instability could be the cause for weak AIN band observed in the emission spectrum. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:2079 / 2082
页数:4
相关论文
共 50 条
  • [1] Optical probe investigation of laser ablated carbon plasma plume in nitrogen ambient
    Singh, Ravi Pratap
    Gupta, Shyam L.
    Thareja, Raj K.
    PHYSICS OF PLASMAS, 2013, 20 (12)
  • [2] Interaction of ambient nitrogen gas and laser ablated carbon plume: Formation of CN
    Thareja, RK
    Dwivedi, RK
    Ebihara, K
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 192 (03): : 301 - 310
  • [3] Third harmonic generation in air ambient and laser ablated carbon plasma
    Singh, Ravi Pratap
    Gupta, Shyam L.
    Thareja, Raj K.
    PHYSICS OF PLASMAS, 2015, 22 (12)
  • [4] Expansion dynamics of laser ablated carbon plasma plume in helium ambient
    Harilal, SS
    APPLIED SURFACE SCIENCE, 2001, 172 (1-2) : 103 - 109
  • [5] Emission features of femtosecond laser ablated carbon plasma in ambient helium
    Al-Shboul, K. F.
    Harilal, S. S.
    Hassanein, A.
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (16)
  • [6] Growth of AlN thin films on (111) and (100) silicon by pulsed laser deposition in nitrogen plasma ambient
    Ogawa, T
    Okamoto, M
    Khin, YY
    Mori, Y
    Hatta, A
    Ito, T
    Sasaki, T
    Hiraki, A
    DIAMOND AND RELATED MATERIALS, 1997, 6 (08) : 1015 - 1018
  • [7] PREPARATION OF ULTRAFINE POWDERS OF ALN AND (ALN+AL) BY NITROGEN PLASMA-AL REACTION
    UDA, M
    OHNO, S
    OKUYAMA, H
    YOGYO-KYOKAI-SHI, 1987, 95 (01): : 76 - 80
  • [8] Effects of pulse laser duration and ambient nitrogen pressure in PLD of AlN
    C. Ristoscu
    E. Gyorgy
    I.N. Mihailescu
    A. Klini
    V. Zorba
    C. Fotakis
    Applied Physics A, 2004, 79 : 927 - 929
  • [9] Effects of pulse laser duration and ambient nitrogen pressure in PLD of AlN
    Ristoscu, C
    Gyorgy, E
    Mihailescu, IN
    Klini, A
    Zorba, V
    Fotakis, C
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 79 (4-6): : 927 - 929
  • [10] AMBIENT GAS-BREAKDOWN BEHAVIOR IN AN EXCIMER LASER-ABLATED PLASMA
    LEE, YI
    SNEDDON, J
    MICROCHEMICAL JOURNAL, 1994, 50 (03) : 235 - 243