Photoelectrical Characteristics of TiO2-Si Heterostructures

被引：0
|
作者：
Kalygina, V. M. [1 ]
Egorova, I. S. [1 ]
Prudaev, I. A. [1 ]
Tolbanov, O. P. [1 ]
机构：
[1] Tomsk State Univ, Funct Elect Lab, Tomsk, Russia
来源：
2015 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON) | 2015年
关键词：
titanium oxide films; thermal annealing; current-voltage characteristics; photocurrent; persistent photoconduction; charge carrier generation;
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
The influence of thermal annealing on photoelectrical properties of TiO2-n-Si structures is studied. It is shown that growth of reverse current during radiation begins at threshold voltage U-t. Its value depends on annealing temperature. Persistent photoconductivity is observed only in such TiO2-Si structures if the oxide titanium film contains anatase crystallites. Photoconductivity is observed in such TiO2-Si structuresif the oxide titanium film contains anatase crystallites.
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页数：4
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