Dose-rate and irradiation temperature dependence of BJT SPICE model rad-parameters

被引：7
|
作者：
Montagner, X [1 ]
Briand, R
Fouillat, P
Schrimpf, RD
Touboul, A
Galloway, KF
Calvet, MC
Calvel, P
机构：
[1] Univ Bordeaux 1, Lab IXL, URA 846 CNRS, F-33405 Talence, France
[2] Vanderbilt Univ, Nashville, TN 37235 USA
[3] Aerospatiale, F-78133 Les Mureaux, France
[4] Alcatel Telecom, F-31037 Toulouse, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 03期
关键词：
D O I：
10.1109/23.685219
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A method to predict low dose rate degradation of bipolar transistors using high dose-rate, high temperature irradiation is evaluated, based on an analysis of four new rad-parameters that are introduced in the BJT SPICE model. This improved BJT model describes the radiation-induced excess base current with great accuracy. The low-level values of the rad-parameters are good tools for evaluating the proposed high-temperature test method because of their high sensitivity to radiation-induced degradation.
引用
收藏
页码：1431 / 1437
页数：7
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