Soft-error simulation system and application to SRAM design

被引：0
|
作者：
Satoh, S
Sudo, R
Tashiro, H
机构：
来源：
FUJITSU SCIENTIFIC & TECHNICAL JOURNAL | 1996年 / 32卷 / 01期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We developed a soft-error simulation system which does not need any fitting parameter. We also proposed a new noise current model which is suitable for any transistor structure and alpha particle incident condition. The soft-error rates of the prediction and an accelerated measurement agreed within one order of the magnitude. Our system can predict the soft-error rates induced by the localized alpha source such as the solder bump, which can not be estimated from the accelerated measurement. Our soft-error simulation system is useful for the SRAM cell design.
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页码：119 / 127
页数：9
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