Surface core levels of In adsorption on Si(001)2x1

被引：34
|
作者：
Yeom, HW
Abukawa, T
Takakuwa, Y
Mori, Y
Shimatani, T
Kakizaki, A
Kono, S
机构：
[1] TOHOKU UNIV,FAC SCI,DEPT PHYS,SENDAI,MIYAGI 98077,JAPAN
[2] UNIV TOKYO,SYNCHROTRON RADIAT LAB,ISSP,TOKYO 106,JAPAN
[3] TOHOKU UNIV,SCI MEASUREMENTS RES INST,SENDAI,MIYAGI 98077,JAPAN
来源：
PHYSICAL REVIEW B | 1996年 / 54卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.54.4456
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The noble surface reconstructions of 2x2, 2x3, and 4x3 induced by In adsorption on a Si(001) surface have been studied by high-resolution photoelectron spectroscopy using synchrotron radiation. The surface core-level shifts of Si 2p were resolved, for the first time, for group-III adsorption on Si(001). It is shown that the Si dimers not bonded to In in the 2x3 phase are buckled and the Si dimers bonded to In are symmetric in both the 2x2 and 2x3 phases. In 4d spectra for all the three phases show a single component in agreement with the prevailing structure models of 2x3 and 2x2 phases but in contradiction to those of 4x3.
引用
收藏
页码：4456 / 4459
页数：4
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