Low-frequency noises in the metal-semiconductor contact

被引：0
|
作者：
Khondkaryan, H. D. [1 ]
Gasparyan, F. V. [1 ]
机构：
[1] Yerevan State Univ, Yerevan 375049, Armenia
来源：
JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES | 2015年 / 50卷 / 02期
关键词：
low-frequency noise; metal-semiconductor structure; Schottky barrier; GAS SENSORS;
D O I：
10.3103/S1068337215020103
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
CVC and low-frequency noises of metal-semiconductor structures were investigated at the room temperature. CVC and low-frequency noise spectra of the diode structures with the Schottky barrier based on the Fe/n-Si, Cr/n-Si and W/n-Si are obtained. It is shown that the CVC, the noise level and its frequency index are strongly depend on the choice of metal contact and its surface area. The physical processes that influence the level and the behavior of low-frequency noises are revealed. From the standpoint of reducing the level of low-frequency noises it was found that the contact material of chromium is better as compared with the iron or wolfram.
引用
收藏
页码：170 / 176
页数：7
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