Thickness and MeV Si ions bombardment effects on the thermoelectric properties of Ce3Sb10 thin films

被引：13
|
作者：
Guener, S. [1 ,2 ]
Budak, S. [1 ,3 ]
Minamisawa, R. Amaral [1 ]
Muntele, C. [1 ]
Ila, D. [1 ]
机构：
[1] Alabama A&M Univ, Dept Phys, Ctr Irradiat Mat, Normal, AL 35762 USA
[2] Fatih Univ, Dept Phys, TR-34500 Istanbul, Turkey
[3] Alabama A&M Univ, Dept Elect Engn, Normal, AL 35762 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 08期
基金：
美国国家科学基金会; 美国国家航空航天局;
关键词：
IBAD; thermoelectric properties; Rutherford backscattering; figure of merit;
D O I：
10.1016/j.nimb.2008.01.045
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The three single layer Ce3Sb10 thin films were grown on silicon dioxide and quartz (suprasil) substrates with thicknesses of 297, 269 and 70 nm using ion beam assisted deposition (IBAD) technique. The high-energy cross plane Si ion bombardments with constant energy of 5 MeV have been performed with varying fluence from 1 x 10(12), 1 x 10(13), 1 x 10(14), 1 x 10(15) ions/cm(2). The Si ions bombardment modified the thermoelectric properties of films as expected. The fluence and temperature dependence of cross plane thermoelectric parameters that are Seebeck coefficient, electrical and thermal conductivities were determined to evaluate the dimensionless figure of merit, ZT. Rutherford backscattering spectrometry (RBS) enabled us to determine the elemental composition of the deposited materials and layer thickness of each film. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1261 / 1264
页数：4
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