InP-based deep-ridge NPN transistor laser

被引：8
|
作者：
Liang, S. [1 ]
Kong, D. H. [1 ]
Zhu, H. L. [1 ]
Zhao, L. J. [1 ]
Pan, J. Q. [1 ]
Wang, W. [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China
来源：
OPTICS LETTERS | 2011年 / 36卷 / 16期
基金：
中国国家自然科学基金;
关键词：
OPERATION; EPITAXY;
D O I：
10.1364/OL.36.003206
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report an InP-based deep-ridge NPN transistor laser (TL, lambda similar to 1.5 mu m). By placing the quantum well (QW) active material above the heavily Zn-doped base layer, both the optical absorption of the heavily p-doped base material and the damage of the quality of the QWs resulted from the Zn diffusion into the QWs are decreased greatly. CW operation of the TL is achieved at -40 degrees C, which is much better than the shallow-ridge InP-based NPN TL. With future optimization of the growth procedure, significant improvement of the performance of the deep-ridge InP-based NPN TLs is expected. (C) 2011 Optical Society of America
引用
收藏
页码：3206 / 3208
页数：3
相关论文
共 50 条
  • [1] Spotsize converter with improved design for InP-based deep-ridge waveguide structure
    Kohtoku, M
    Oku, S
    Kadota, Y
    Yoshikuni, Y
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2005, 23 (12) : 4207 - 4214
  • [2] Continuous-wave operation up to 20 °C of deep-ridge npn-InGaAsP/InP multiple quantum well transistor laser emitting at 1.5-μm wavelength
    Qiao, L. J.
    Liang, S.
    Han, L. S.
    Xu, J. J.
    Zhu, H. L.
    Wang, W.
    OPTICS EXPRESS, 2015, 23 (09): : 11388 - 11393
  • [3] Performance of Hybrid Laser Diodes Consisting of Silicon Slab and InP/InGaAsP Deep-Ridge Waveguides
    Leem, Young Ahn
    Kim, Kisoo
    Song, Jung-Ho
    Kwon, O-Kyun
    Kim, Gyungock
    ETRI JOURNAL, 2010, 32 (02) : 339 - 341
  • [4] Galvanic corrosion effects in InP-based laser ridge structures
    D. G. Ivey
    J. Luo
    S. Ingrey
    R. Moore
    I. Woods
    Journal of Electronic Materials, 1998, 27 : 89 - 95
  • [5] Galvanic corrosion effects in InP-based laser ridge structures
    Ivey, DG
    Luo, J
    Ingrey, S
    Moore, R
    Woods, I
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (02) : 89 - 95
  • [6] Attenuation characteristics of InP/InGaAsP deep-ridge waveguide turning mirror
    Park, JW
    Beak, Y
    Song, JH
    Sim, ED
    Kim, SB
    Park, KH
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2003, 37 (06) : 428 - 431
  • [7] Processing of InP-based shallow ridge laser waveguides using a HBrICP plasma
    Bouchoule, S.
    Azouigui, S.
    Patriarche, G.
    Guilet, S.
    Le Gratiet, L.
    Martinez, A.
    Lelarge, F.
    Ramdane, A.
    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 218 - 221
  • [8] InP-Based Coupled Ridge Waveguide Laser Arrays Emitting at 2.1 μm
    Zhang, Zhongkai
    Xu, Feng
    Zhang, Jinchuan
    Lv, Zunren
    Yang, Xiaoguang
    Wang, Zhanguo
    Yang, Tao
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 18 (11) : 7512 - 7515
  • [9] Deep Ridge InGaAlAs/InP MQW Transistor Lasers
    Zhang, Chenyang
    Xiong, Xinkai
    Qiao, Lijun
    Zhang, Mingjiang
    Zhao, Lingjuan
    Liang, Song
    IEEE ELECTRON DEVICE LETTERS, 2024, 45 (07) : 1225 - 1228
  • [10] Dual-core Spot-size Converter with Tapered Cladding Layer Designed for High-efficiency Mode Coupling to InP-Based Deep-ridge Waveguide
    Kitamura, Takamitsu
    Kono, Naoya
    Yagi, Hideki
    Ishikawa, Tsutomu
    Horino, Kazuhiko
    Kimura, Daisuke
    Seki, Morihiro
    Yoneda, Yoshihiro
    Uesaka, Katsumi
    Shoji, Hajime
    2014 IEEE PHOTONICS CONFERENCE (IPC), 2014, : 280 - 281
12345