Core structures analyses of (a plus c)-edge dislocations in wurtzite GaN through atomistic simulations and Peierls-Nabarro model

被引:15
|
作者
Chen, Cheng [1 ]
Meng, Fanchao [1 ]
Song, Jun [1 ]
机构
[1] McGill Univ, Dept Min & Mat Engn, Montreal, PQ H3A 0C5, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
TRANSMISSION ELECTRON-MICROSCOPY; A-PLANE GAN; SCREW DISLOCATIONS; GALLIUM NITRIDE; THREADING DISLOCATIONS; MOLECULAR-DYNAMICS; STACKING FAULTS; C PLUS; MAGNESIUM; EPITAXY;
D O I
10.1063/1.4921289
中图分类号
O59 [应用物理学];
学科分类号
摘要
The core structures and slip characteristics of (a+c)-edge dislocations on pyramidal planes in wurtzite GaN were investigated employing molecular dynamics simulations. Multiple stable core configurations are identified for dislocations along the glide and shuffle planes. The corresponding generalized-stacking-fault energy (GSFE) curves for the glide and shuffle slips are calculated. The GSFE curves, combined with the Peierls-Nabarro model, demonstrate that the shuffle slip is favored over the glide slip given the markedly lower Peierls energy and stress of the shuffle slip. Our findings also indicate that in general slip motions for (a+c)-edge dislocations are only possible at elevated temperature, and the necessity of further studies of thermally activated processes to better understand the dynamics of (a+c) dislocations in GaN. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:7
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