Dislocation arrays at the interface between an epitaxial layer and its substrate

被引：9

作者：

Lubarda, VA ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Appl Mech & Engn Sci, La Jolla, CA 92093 USA

来源：

MATHEMATICS AND MECHANICS OF SOLIDS | 1998年 / 3卷 / 04期

关键词：

D O I：

10.1177/108128659800300403

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The relationship between the him thickness and dislocation spacing in the interface dislocation arrays is studied by using a criterion based on the energy difference between the relaxed film configuration and a selected, partially relaxed or unrelaxed reference configuration. It is shown that arrays with lower dislocation density are formed in relaxation processes that are more gradual. Stability of arrays is examined, and new bounds of the stable range are constructed.

引用

页码：411 / 431

页数：21

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