A Circuit-Based Approach to Simulate the Characteristics of a Silicon Photovoltaic Module With Aging

The aging of photovoltaic modules results inevitably in a decrease of their efficiency all through their lifetime utilization. An approach to simulate the evolution of electrical characteristics of a photovoltaic module with aging is presented. The photovoltaic module is modeled by an equivalent electrical circuit whose components have time-dependent characteristics determined under accelerated tests. By entering sun irradiance and temperature, I-V and P-V curves as well as efficiency evolution can be simulated over years assuming equivalent time. The methodology is applied for the case of a monocrystalline photovoltaic module modeled by a one-diode circuit and aging laws are determined with experimental results of damp heat (DH) tests 85 degrees C/85% RH performed by Hulkoff (2009, "Usage of Highly Accelerated Stress Test (HAST) in Solar Module Aging Procedures," M.S. thesis, Chalmers University of Technology, Goteborg, Sweden). A power degradation rate of 0.53%/yr is found. A parametric study shows that the rundown of optical transmittance of the upper layers with aging has the most important impact by reducing the initial efficiency by 11.5% over a 25-year exposure contrary to electrical degradations which cause a decrease of 1.85% of the initial efficiency.