Photo-induced effects in Ge25Ga10S65 glasses studied by XPS and XAS

被引:14
|
作者
Lisboa-Filho, PN
Mastelaro, VR
Schreiner, WH
Messaddeq, SH
Li, MS
Messaddeq, Y
Hammer, P
Ribeiro, SJL
Parent, P
Laffon, C
机构
[1] Univ Fed Parana, Dept Fis, Lab Superficies & Interfaces, BR-81531990 Curitiba, Parana, Brazil
[2] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil
[3] UNESP, Inst Quim, BR-14801970 Araraquara, Brazil
[4] Ctr Univ Paris Sud, Lab Utilisast Rayonnement Electromagnet, F-91898 Orsay, France
基金
巴西圣保罗研究基金会;
关键词
chalcogenide glasses; photo-induced effects; oxygen; XPS; XAS;
D O I
10.1016/j.ssi.2005.04.005
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The present paper focuses on the structural, electronic, and compositional properties of Ge25Ga10S65 glasses before and after UV illumination in air using X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) techniques. The XPS Ge 3d spectra reveal the existence of Ge-O bonds in the surface region of illuminated glass. In the case of this sample, XAS O K-edge spectra showed the formation of an enriched region of oxygen atoms in the glass bulk, indicating a different bonding structure of oxygen at the surface and in the bulk of the glass. Moreover, the structural changes that occur after UV illumination in the glass sample are identified as the formation of a homogeneous germanium oxide surface layer followed by an intermediary Ge25Ga10S65-yOz subsurface region. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:1403 / 1409
页数:7
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