Computational study of graphene nanoribbon FETs for RF applications

被引：0
|
作者：
Imperiale, I. [1 ]
Bonsignore, S. [1 ]
Gnudi, A. [1 ]
Gnani, E. [1 ]
Reggiani, S. [1 ]
Baccarani, G. [1 ]
机构：
[1] Univ Bologna, ARCES, Viale Risorgimento 2, I-40136 Bologna, Italy
来源：
2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST | 2010年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The high-frequency analog performance of 10-15 nm-wide GNR-FETs is investigated by means of simulations based on a full-quantum atomistic model. Ideal edges and acoustic phonons are considered. Cut-off frequencies in the order of several THz are predicted. Limitations in the maximum voltage-gain (approximate to 10), due to the absence of a clear saturation region related to the small band-gap, appear to be the main drawback. Design criteria (asymmetrical doping, high-kappa dielectric) for minimizing the problem are suggested.
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页数：4
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