Improving the Electronic Properties of Au/n-Si Type Schottky Junction Structure With Graphene-PVP Nano-Thin Film by Using the I-V, C-2-V and G/ω-V Characteristics

The letter reports the performance assessment of Au/n-Si type Schottky Junction Structure (SJS) with and without the graphene-PVP layer, classified as SJS(1) and SJS(2) devices. The electronic parameters by using the developed LabVIEW based program were calculated from raw data of I-V, C-V and G/omega-V measurements at room temperature. According to Thermionic Emission (TE) theory, the graphene-PVP layer significantly modified the barrier height than the other structure. Using the Ohm's Law, it is found that the R magnitude increases, while the R magnitude decreases for SJS(2), according to SJS(1) type device. Alternatively, using Cheung's and the modified Norde functions for the accuracy and reliability of the results, the obtained n, values by both equations are in good agreement. Using the C-2-V and G/omega-V characteristics, the magnitudes of the electronic parameters, such as, etc., for the devices were calculated to supply more information. Also, the magnitudes were calculated 1.299 x 10(-10) F and 1.192 x 10(-10) F at 3 V and then, the interface layer thicknesses were obtained as 2.08 nm and 68.8 nm for SJS(1) and SJS(2), respectively. It can be concluded that the graphene-PVP layer significantly affects the quality and performance of Au/n-Si type SJS devices.