Yield-driven near-threshold SRAM design

Voltage scaling is desirable in SRAM to reduce energy consumption. However, commercial SRAM is prone to functional failures when V-dd is scaled. Several SRAM designs scale V-dd to 200-300mV to minimize energy per access, but these designs do not consider SRAM robustness, limiting them to small arrays and sensor type applications. We examine the effects on area and energy for a differential 6T, single-ended 6T with power rail collapsing and an 8T bitcell as V-dd is scaled and the bitcells are sized appropriately to maintain robustness. SRAM robustness is examined using importance sampling to reduce simulation runtime. At high voltages, the differential 6T bitcell is the smallest for the same failure rate, but the 8T bitcell is smaller when V-dd is scaled below 450mV. For V-dd below V-th, bitcelts: must be sized greatly to retain robustness and large arrays become impractical. The differential 6T and 8T designs have the lowest dynamic energy consumption, and the single-ended 6T design has the lowest leakage. The supply voltage for minimum energy operation depends on cache configuration and can be well above V-th for large caches with low dynamic activity.