共 50 条
- [1] Resist reflow process for arbitrary 32 nm node pattern - art. no. 69233A ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923 : A9233 - A9233
- [2] Ion implantation as insoluble treatment for resist stacking process - art. no. 692322 ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923 : 92322 - 92322
- [3] Processing and modeling optimization for grayscale lithography - art. no. 69233B ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923 : B9233 - B9233
- [4] Post develop stain defect reduction - art. no. 69233J ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923 : J9233 - J9233
- [5] Resist freezing process for double exposure lithography - art. no. 69230G ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923 : G9230 - G9230
- [6] EUV resist development in Selete - art. no. 692313 ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923 : 92313 - 92313
- [7] Wafer shape compensation at the track PEB for improved CD uniformity - art. no. 69233M ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923 : M9233 - M9233
- [8] Quantitative analysis of EUV resist outgassing - art. no. 692345 ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923 : 92345 - 92345
- [9] EUV resist outgassing analysis in selete - art. no. 692342 ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923 : 92342 - 92342
- [10] Impact of |ΔI|=5/2 transitions in K→ππ decays -: art. no. 094024 PHYSICAL REVIEW D, 2000, 62 (09):