Kinetic Monte Carlo simulation of the temperature dependence of semiconductor quantum dot growth - art. no. 68240B

被引：0
|
作者：
Zhao, Chang [1 ]
Zhao, Man [1 ]
Wang, Yi [1 ]
Wu, Guang Ming [1 ]
机构：
[1] Beijing Inst Petrochem & Technol, Dept Phys & Math, Beijing 102617, Peoples R China
来源：
SEMICONDUCTOR LASERS AND APPLICATIONS III | 2008年 / 6824卷
关键词：
kinetic Monte Carlo; molecular beam epitaxy; kinetic effect; quantum dot;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A detailed kinetic Monte Carlo simulation (KMC) is developed to investigate the temperature dependence of semiconductor quantum dot (QD) grown by molecular beam epitaxy syetem. We find that growth temperature plays an important role in determining the size of the QD. The simulation results are compared with the experiment and the agreement between them indicates that this KMC simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs.
引用
收藏
页码：B8240 / B8240
页数：4
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