Preparation of nano-TiO2 thick film and its electrical properties

被引：0

作者：

Wang, J ^{[1
]}

Gao, L ^{[1
]}

Song, Z ^{[1
]}

Zhou, W ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

JOURNAL OF INORGANIC MATERIALS | 1998年 / 13卷 / 06期

关键词：

nano-TiO2; resistance; gas sensitivity; sensor; thick film;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Nano-TiO2 and micro-TiO2 thick films were prepared on alpha-Al2O3 substrates by silk net lithograph method, the measured film resistance of nano-TiO2 was higher than that of micro-TiO2 in experimental temperature range, nano-TiO2 film demonstrated more change as the O-2 partial pressure changed. XRD and SEM were also used to characterize the stucture of the prepared films.

引用

页码：866 / 870

页数：5

共 7 条

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