Experimental characterisation of PD SOI MOSFET devices fabricated with diamond-shaped body contact

The design of diamond-shaped body-contacted (DSBC) devices using standard layers in a 0.35 mu m silicon-on-insulator (SOI) complementary metal-oxide-semiconductor process is described in this article. The technology is based on a manufacturable partially depleted SOI process targeted for radio frequency applications. The experimental measurements of drain induced barrier lowering for the fabricated DSBC structure showed suppression of floating body effects (FBE) at the promising rate of 24 mV/V. The measurement results confirmed current drive (IDS) improvement by 25% at VDS = 1.5 V and VGS = 1.5 V compared to conventional body-tied-source (BTS) device. A constant and steady output conductance (gDS) in the saturation region was observed for the DSBC structure. The gate trans-conductance (gm) is improved by 34% at VDS = 1.5 V and VGS = 1.5 V compared to conventional BTS device. Three-dimensional device simulation provides insight on FBE suppression and channel current improvement. Experimental results confirmed the area efficiency of the DSBC structure and its excellent current drive performance.