Study of injection and relaxation of electron spins in InGaN film by time-resolved absorption spectroscopy

被引：3
|
作者：
Chen Xiao-Xue [1 ]
Teng Li-Hua [1 ]
Liu Xiao-Dong [1 ]
Huang Qi-Wen [1 ]
Wen Jin-Hui [1 ]
Lin Wei-Zhu [1 ]
Lai Tian-Shu [1 ]
机构：
[1] Sun Yat Sen Univ, Dept Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源：
ACTA PHYSICA SINICA | 2008年 / 57卷 / 06期
关键词：
electron spin; InGaN; spin polarization; spin relaxation;
D O I：
10.7498/aps.57.3853
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The injection and relaxation of electron spins in In0.1Ga0.9 N film were studied by femtosecond time-resolved circularly polarized pump-probe spectroscopy. An initial degree of spin polarization of 0.2 was obtained, which agrees with 3 : 1 ratio of heavy- to light-hole valence bands in transition strength, but not with the 1 : 1 or 1 : 0.94 ratios. A spin relaxation lifetime of 490 +/- 70 ps was obtained at room temperature. The spin relaxation mechanism is discussed qualitatively, and is thought to be dominated by BAP mechanism here.
引用
收藏
页码：3853 / 3856
页数：4
相关论文
共 29 条
  • [1] GIANT MAGNETORESISTANCE OF (001)FE/(001) CR MAGNETIC SUPERLATTICES
    BAIBICH, MN
    BROTO, JM
    FERT, A
    VANDAU, FN
    PETROFF, F
    EITENNE, P
    CREUZET, G
    FRIEDERICH, A
    CHAZELAS, J
    [J]. PHYSICAL REVIEW LETTERS, 1988, 61 (21) : 2472 - 2475
  • [2] Spin coherence and dephasing in GaN
    Beschoten, B
    Johnston-Halperin, E
    Young, DK
    Poggio, M
    Grimaldi, JE
    Keller, S
    DenBaars, SP
    Mishra, UK
    Hu, EL
    Awschalom, DD
    [J]. PHYSICAL REVIEW B, 2001, 63 (12)
  • [3] BIR GL, 1976, ZH EKSP TEOR FIZ, V42, P705
  • [4] Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers
    Buyanova, IA
    Bergman, JP
    Chen, WM
    Thaler, G
    Frazier, R
    Abernathy, CR
    Pearton, SJ
    Kim, J
    Ren, F
    Kyrychenko, FV
    Stanton, CJ
    Pan, CC
    Chen, GT
    Chyi, J
    Zavada, JM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06): : 2668 - 2672
  • [5] On the origin of spin loss in GaMnN/InGaN light-emitting diodes
    Buyanova, IA
    Izadifard, M
    Chen, WM
    Kim, J
    Ren, F
    Thaler, G
    Abernathy, CR
    Pearton, SJ
    Pan, CC
    Chen, GT
    Chyi, JI
    Zavada, JM
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (14) : 2599 - 2601
  • [6] Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection
    Chen, WM
    Buyanova, IA
    Nishibayashi, K
    Kayanuma, K
    Seo, K
    Murayama, A
    Oka, Y
    Thaler, G
    Frazier, R
    Abernathy, CR
    Ren, F
    Pearton, SJ
    Pan, CC
    Chen, GT
    Chyi, JI
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (19) : 1 - 3
  • [7] Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth
    Chichibu, SF
    Torii, K
    Deguchi, T
    Sota, T
    Setoguchi, A
    Nakanishi, H
    Azuhata, T
    Nakamura, S
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (12) : 1576 - 1578
  • [8] Ultrafast carrier dynamics in a highly excited GaN epilayer
    Choi, CK
    Kwon, YH
    Krasinski, JS
    Park, GH
    Setlur, G
    Song, JJ
    Chang, YC
    [J]. PHYSICAL REVIEW B, 2001, 63 (11):
  • [9] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors
    Dietl, T
    Ohno, H
    Matsukura, F
    Cibert, J
    Ferrand, D
    [J]. SCIENCE, 2000, 287 (5455) : 1019 - 1022
  • [10] DYAKONOV MI, 1971, SOV PHYS JETP-USSR, V33, P1053
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