Direct Chemical Vapor Deposition Growth of Graphene on Insulating Substrates

被引:52
|
作者
Sun, Jingyu [1 ,3 ]
Zhang, Yanfeng [1 ,2 ]
Liu, Zhongfan [1 ]
机构
[1] Peking Univ, Coll Chem & Mol Engn, Beijing Sci & Engn Ctr Nanocarbons, Beijing Natl Lab Mol Sci,Ctr Nanochem CNC, Beijing 100871, Peoples R China
[2] Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
[3] Univ Cambridge, Dept Engn, CGC, Cambridge CB3 0FA, England
来源
CHEMNANOMAT | 2016年 / 2卷 / 01期
基金
中国国家自然科学基金;
关键词
carbon; chemical vapor deposition; graphene; growth; insulator; SINGLE-LAYER GRAPHENE; HIGH-QUALITY; LARGE-AREA; POLYCRYSTALLINE GRAPHENE; EPITAXIAL-GROWTH; CRYSTAL GRAPHENE; LOW-TEMPERATURE; FILMS; TRANSPARENT; CARBON;
D O I
10.1002/cnma.201500160
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Recent years have witnessed an increase in attention to the direct synthesis of graphene on a variety of insulators by virtue of chemical vapor deposition (CVD), which has shown great potential in a broad range of applications. In this Focus Review, we summarize the key research efforts on the development of CVD routes to allow direct deposition of graphene on insulating materials, with a special focus upon our recent progress towards graphene synthesis employing hexagonal boron nitride, glass, and SrTiO3 planar substrates, as well as NaCl powders. To begin with, we outline the important features and necessities in the field of graphene synthesis by direct CVD. We then provide an upto-date research summary with respect to the employment of substrate (planar vs. powder; novel vs. conventional), the design of synthetic methods, and the quality/property control of products. Finally, we discuss the potential challenges and opportunities for the direct CVD growth of graphene on insulators.
引用
收藏
页码:9 / 18
页数:10
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