Self-assembled InGaAs quantum dot superlattices

被引：0
|
作者：
Kawabe, M [1 ]
机构：
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
来源：
PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES TO NANOMEETING-2001 | 2001年
关键词：
D O I：
10.1142/9789812810076_0002
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Well-ordered high-density quantum dot arrays of InGaAs have been fabricated on high-index substrates by atomic-hydrogen assisted molecular beam epitaxy. The density and the dot size are controlled by growth temperature and substrate structure. The dot growth mechanism is explained not only by simple strain relaxation but also by phase separation. The surface coverage of the high density quantum dots is almost 100 %, which implies the lateral coupling between the dots. Photoluminescence and photoconductivity measurements show the existence of minibands formed by lateral coupling of dots.
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页码：15 / 21
页数：7
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