Development of a new generation of 3D pixel sensors for HL-LHC

被引：29

作者：

Betta, G. -F. Dalla ^{[1
,2
]}

Boscardin, M. ^{[2
,3
]}

Darbo, G. ^{[4
]}

Mendicino, R. ^{[1
,2
]}

Meschini, M. ^{[5
]}

Messineo, A. ^{[6
,7
]}

Ronchin, S. ^{[3
]}

Sultan, D. M. S. ^{[1
,2
]}

Zorzi, N. ^{[2
,3
]}

机构：

[1] Univ Trento, Dipartimento Ingn Ind, I-38123 Trento, Italy

[2] TIFPA INFN, I-38123 Trento, Italy

[3] Fdn Bruno Kessler, I-38123 Trento, Italy

[4] Ist Nazl Fis Nucl, Sez Genova, I-16146 Genoa, Italy

[5] Ist Nazl Fis Nucl, Sez Firenze, I-50019 Sesto Fiorentino, Italy

[6] Univ Pisa, Dipartimento Fis, I-56127 Pisa, Italy

[7] Ist Nazl Fis Nucl, Sez Pisa, I-56127 Pisa, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2016年 / 824卷

关键词：

3D silicon sensors; Deep Reactive Ion Etching; Fabrication technology;

D O I：

10.1016/j.nima.2015.08.032

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：386 / 387

页数：2

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